Experiments and simulation of the secondary effect during focused Ga ion beam induced deposition of adjacent nanostructures

Experiments and simulation of the secondary effect during focused Ga ion beam induced deposition of adjacent nanostructures

Focused Ga ion beam can deposit various materials with high-resolution assisted by elaborately selected precursor gases. During the deposition process, the secondary effect arises due to the generation of secondary particles by primary ions. Prominent morphological changes are caused by the secondar...

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Bibliographic Details
Main Authors: Chen Fang, Qing Chai, Xi Lin, Yan Xing, Zaifa Zhou
Format: Article
Language:English
Published: Elsevier 2021-11-01
Series:Materials & Design
Subjects:
Secondary effect
Secondary particle
Numerical model
Structural characterization
Composition content
Adjacent nanostructures
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127521005487

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http://www.sciencedirect.com/science/article/pii/S0264127521005487

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