Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications
An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n<sup>+</sup>-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-11-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/8/11/418 |