Ultralow Voltage FinFET- Versus TFET-Based STT-MRAM Cells for IoT Applications
Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile memories. This, along with the combination of tunnel FET (TFET) technology, could enable the design of ultralow-power/u...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-07-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/15/1756 |