Performance change of few layer black phosphorus transistors in ambient
Transistors were fabricated based on mechanical exfoliated few layer black phosphorus (BP) flakes, and performance change of these devices exposed to air was explored systematically. BP devices were found to suffer severe performance degradation in ambient conditions, and the field effect mobility d...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4933124 |