Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry

A contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by ex...

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Bibliographic Details
Main Authors: Qian Wang, Weiguo Liu, Lei Gong, Liguo Wang, Yaqing Li
Format: Article
Language:English
Published: AIP Publishing LLC 2020-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5142889