Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
A contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by ex...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5142889 |