Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry

Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry

A contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by ex...

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Main Authors: Qian Wang, Weiguo Liu, Lei Gong, Liguo Wang, Yaqing Li
Format: Article
Language:English
Published: AIP Publishing LLC 2020-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5142889
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spelling doaj-d7b5d193401b4afeba9dec2a6572b13a2020-11-25T03:35:28ZengAIP Publishing LLCAIP Advances2158-32262020-03-01103035118035118-1010.1063/1.5142889Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometryQian Wang0Weiguo Liu1Lei Gong2Liguo Wang3Yaqing Li4School of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaSchool of Optoelectronic Engineering, Xi’an Technological University, Xi’an 710021, ChinaA contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by exploiting photon reabsorption in photocarrier radiometry measurements. With the proposed mathematical model, the influence of experimental and sample parameters on the measurement of the doping concentration is analyzed in detail. The uncertainties and limitations of the method are also discussed. Furthermore, an experimental configuration is proposed.http://dx.doi.org/10.1063/1.5142889
collection DOAJ
language English
format Article
sources DOAJ
author Qian Wang
Weiguo Liu
Lei Gong
Liguo Wang
Yaqing Li
spellingShingle Qian Wang
Weiguo Liu
Lei Gong
Liguo Wang
Yaqing Li
Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
AIP Advances
author_facet Qian Wang
Weiguo Liu
Lei Gong
Liguo Wang
Yaqing Li
author_sort Qian Wang
title Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
title_short Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
title_full Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
title_fullStr Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
title_full_unstemmed Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
title_sort determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2020-03-01
description A contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by exploiting photon reabsorption in photocarrier radiometry measurements. With the proposed mathematical model, the influence of experimental and sample parameters on the measurement of the doping concentration is analyzed in detail. The uncertainties and limitations of the method are also discussed. Furthermore, an experimental configuration is proposed.
url http://dx.doi.org/10.1063/1.5142889
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AT leigong determinationofdopingconcentrationofheavilydopedsiliconwafersusingphotonreabsorptioninphotocarrierradiometry
AT liguowang determinationofdopingconcentrationofheavilydopedsiliconwafersusingphotonreabsorptioninphotocarrierradiometry
AT yaqingli determinationofdopingconcentrationofheavilydopedsiliconwafersusingphotonreabsorptioninphotocarrierradiometry
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