Current Pulses to Control the Conductance in RRAM Devices

Current Pulses to Control the Conductance in RRAM Devices

Due to the high number of reachable conductance levels in resistive switching devices, they are good candidates to implement artificial synaptic devices. In this work, we have studied the control of the intermediate conductance levels in HfO2-based MIM capacitors using current pulses. The set transi...

Full description

Bibliographic Details
Main Authors: Hector Garcia, Salvador Duenas, Oscar G. Ossorio, Helena Castan
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Conductive filament
multilevel storage
resistive switching memory (RRAM)
synaptic devices
Online Access:https://ieeexplore.ieee.org/document/9032312/

Similar Items

Similar Items