Current Pulses to Control the Conductance in RRAM Devices
Due to the high number of reachable conductance levels in resistive switching devices, they are good candidates to implement artificial synaptic devices. In this work, we have studied the control of the intermediate conductance levels in HfO2-based MIM capacitors using current pulses. The set transi...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9032312/ |