Effect of Dopant Compensation on the Behavior of Dissolved Iron and Iron-Boron Related Complexes in Silicon
The behavior of iron, iron-boron (FeB) pairs, and iron-boron-phosphorus (FeB-P) complexes has been studied in B-doped Czochralski silicon with phosphorus (P) compensation and compared with that in uncompensated material. The interstitial iron concentration has been measured at temperatures from 50 t...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/154574 |