A generic tight-binding model for monolayer, bilayer and bulk MoS2
Molybdenum disulfide (MoS2) is a layered semiconductor which has become very important recently as an emerging electronic device material. Being an intrinsic semiconductor the two-dimensional MoS2 has major advantages as the channel material in field-effect transistors. In this work we determine the...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-05-01
|
| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4804936 |