Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Here, the authors demonstrate an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary switch with a two-dimensional MoS2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV/dec subthreshold swing over five decades.

Bibliographic Details
Main Authors: Qilin Hua, Guoyun Gao, Chunsheng Jiang, Jinran Yu, Junlu Sun, Taiping Zhang, Bin Gao, Weijun Cheng, Renrong Liang, He Qian, Weiguo Hu, Qijun Sun, Zhong Lin Wang, Huaqiang Wu
Format: Article
Language:English
Published: Nature Publishing Group 2020-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-20051-0

Internet

https://doi.org/10.1038/s41467-020-20051-0

Similar Items