A Combined Modulation of Set Current With Reset Voltage to Achieve 2-bit/cell Performance for Filament-Based RRAM
A combined operation scheme to realize multibit switching in filament-based bipolar RRAM device is proposed. By combining the modulations of the current compliance in set operations with the stop voltage in reset operations together, the size or the quantity of the filaments in the film bulk can be...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6863671/ |