A Self-Regulating Method for IGBT Turn-Off Peak Voltage Control With Turn-Off Characteristics Improvement
In hard-switching applications, insulated gate bipolar transistors (IGBTs) always suffer from harmful turn-off peak voltages. To switch the devices safely, it is a common practice to use large enough drive resistances in conventional gate drives (CGD). This, however, slows down the turn-off transien...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9528911/ |