Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectroscopy. Raman spectra indicating possible Ge and B...

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Bibliographic Details
Main Authors: Min-Hao Hong, Chun-Wei Chang, Dung-Ching Perng, Kuan-Ching Lee, Shiu-Ko Jang Jian, Wei-Fan Lee, Yen Chuang, Yu-Ta Fan, Woo Sik Yoo
Format: Article
Language:English
Published: AIP Publishing LLC 2012-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4748294

Internet

http://dx.doi.org/10.1063/1.4748294

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