Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x
Segregation energy trends and their charge state dependence were established for Group II to Group VI substitutional metal dopants in HfO2 using density functional theory. Corroborating the segregation energy with dopant-oxygen bond lengths and charge state stability, strong effects are predicted fo...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5032120 |