Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
Abstract The interfacial and electrical properties of atomic layer deposited AlN on n-GaN with different AlN thicknesses were investigated. According to capacitance–voltage (C–V) characteristics, the sample with a 7.4-nm-thick AlN showed the highest interface and oxide trap densities. When the AlN t...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2018-08-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-018-2645-8 |