GaAs Nanomembranes in the High Electron Mobility Transistor Technology

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In<sub>0.23</sub>Ga<sub>0.77</sub>As channel...

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Bibliographic Details
Main Authors: Dagmar Gregušová, Edmund Dobročka, Peter Eliáš, Roman Stoklas, Michal Blaho, Ondrej Pohorelec, Štefan Haščík, Michal Kučera, Róbert Kúdela
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Materials
Subjects:
nanomembrane
hybrid integration
GaAs
InGaAs channel
epitaxial lift-off
HEMT
Online Access:https://www.mdpi.com/1996-1944/14/13/3461

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https://www.mdpi.com/1996-1944/14/13/3461

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