Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions
Quenching-time characterization is the way to measure the speed of chalcogenide material to transform from the amorphous (RESET) state to the crystalline (SET) one after application of a proper programming pulse. It is here proposed to study the impact of process and programming conditions on cell p...
Main Authors: | E. Gomiero, G. Samanni, J. Jasse, C. Jahan, O. Weber, R. Berthelon, R. Ranica, L. Favennec, V. Caubet, D. Ristoiu, J. P. Reynard, L. Clement, P. Zuliani, R. Annunziata, F. Arnaud |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8704299/ |
Similar Items
-
Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
by: Panni Wang, et al.
Published: (2017-01-01) -
Electrical Switching Investigations To Design Amorphous Semiconductors For Device Applications
by: Prakash, S
Published: (2012) -
Conception et réalisation de commutateurs RF à base de matériaux à transition de phase (PTM) et à changement de phase (PCM)
by: Mennai, Amine
Published: (2016) -
Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications
by: Das, Chandasree
Published: (2014) -
Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications
by: Sreevidya Varma, G
Published: (2018)