Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions

Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions

Quenching-time characterization is the way to measure the speed of chalcogenide material to transform from the amorphous (RESET) state to the crystalline (SET) one after application of a proper programming pulse. It is here proposed to study the impact of process and programming conditions on cell p...

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Bibliographic Details
Main Authors: E. Gomiero, G. Samanni, J. Jasse, C. Jahan, O. Weber, R. Berthelon, R. Ranica, L. Favennec, V. Caubet, D. Ristoiu, J. P. Reynard, L. Clement, P. Zuliani, R. Annunziata, F. Arnaud
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous
chalcogenide
phase change memory (PCM)
Ge-Sb-Te (GST) compounds
quenching time
resistance
Online Access:https://ieeexplore.ieee.org/document/8704299/

Internet

https://ieeexplore.ieee.org/document/8704299/

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