The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, an...

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Main Authors: Weifeng Zheng, Yue Chen, Xihong Peng, Kehua Zhong, Yingbin Lin, Zhigao Huang
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Materials
Subjects:
binary copper oxide
phase structure
band gap
contact potential difference
Online Access:http://www.mdpi.com/1996-1944/11/7/1253
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spelling doaj-d2ce062127724d1ba209a1ee676142aa2020-11-24T23:41:30ZengMDPI AGMaterials1996-19442018-07-01117125310.3390/ma11071253ma11071253The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron SputteringWeifeng Zheng0Yue Chen1Xihong Peng2Kehua Zhong3Yingbin Lin4Zhigao Huang5Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, ChinaFujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, ChinaFujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, ChinaFujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, ChinaFujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, ChinaFujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 350117, ChinaP-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.http://www.mdpi.com/1996-1944/11/7/1253binary copper oxidephase structureband gapcontact potential difference
collection DOAJ
language English
format Article
sources DOAJ
author Weifeng Zheng
Yue Chen
Xihong Peng
Kehua Zhong
Yingbin Lin
Zhigao Huang
spellingShingle Weifeng Zheng
Yue Chen
Xihong Peng
Kehua Zhong
Yingbin Lin
Zhigao Huang
The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering
Materials
binary copper oxide
phase structure
band gap
contact potential difference
author_facet Weifeng Zheng
Yue Chen
Xihong Peng
Kehua Zhong
Yingbin Lin
Zhigao Huang
author_sort Weifeng Zheng
title The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering
title_short The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering
title_full The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering
title_fullStr The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering
title_full_unstemmed The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering
title_sort phase evolution and physical properties of binary copper oxide thin films prepared by reactive magnetron sputtering
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2018-07-01
description P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.
topic binary copper oxide
phase structure
band gap
contact potential difference
url http://www.mdpi.com/1996-1944/11/7/1253
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