The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, an...

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Bibliographic Details
Main Authors: Weifeng Zheng, Yue Chen, Xihong Peng, Kehua Zhong, Yingbin Lin, Zhigao Huang
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Materials
Subjects:
binary copper oxide
phase structure
band gap
contact potential difference
Online Access:http://www.mdpi.com/1996-1944/11/7/1253

Internet

http://www.mdpi.com/1996-1944/11/7/1253

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