Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell

• Main Authors: X. B. Shen, A. Aierken, M. Heini, J. H. Mo, Q. Q. Lei, X. F. Zhao, M. Sailai, Y. Xu, M. Tan, Y. Y. Wu, S. L. Lu, Y. D. Li, Q. Guo
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2019-07-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.5094472

In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction full spectra solar cell. The equivalent displacement damage dose model was applied to study the radiation effects of solar cell. The results show that the electrical parameters of the solar cell degrade seriously with the increase of irradiation fluences, the reduction of minority carrier life-time and changes of series and shunt resistance caused by irradiation-induced displacement damage are the main reason for the degradation of cell performance. Degradation of spectral response mainly occurred in the long wavelength region of solar cell due to the bigger displacement damage in the base layer of solar cell. Degradation properties of solar cell by electron and proton irradiation can be predicted by electron to proton damage equivalency factor Rep.