Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell

Degradation analysis of 1 MeV electron and 3 MeV proton irradiated InGaAs single junction solar cell

In this paper we reported the electrical and spectral properties of 1 MeV electron and 3 MeV proton irradiated In0.53Ga0.47As single junction solar cell, which is used as the fourth subcell of wafer bonded GaInP/GaAs//InGaAsP/InGaAs four-junction full spectra solar cell. The equivalent displacement...

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Bibliographic Details
Main Authors: X. B. Shen, A. Aierken, M. Heini, J. H. Mo, Q. Q. Lei, X. F. Zhao, M. Sailai, Y. Xu, M. Tan, Y. Y. Wu, S. L. Lu, Y. D. Li, Q. Guo
Format: Article
Language:English
Published: AIP Publishing LLC 2019-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5094472

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http://dx.doi.org/10.1063/1.5094472

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