Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate

The effects of self-organized GeSn/Ge quantum dot’s size and shape on the direct band gap interband emission energy, oscillator strength and radiative lifetime are evaluated. The electron’s and the hole’s confined energies and their corresponding wave function are driven by solving the 3D Schrodinge...

Full description

Bibliographic Details
Main Authors: Mourad Baira, Maha Aljaghwani, Bassem Salem, Niyaz Ahmad Madhar, Bouraoui Ilahi
Format: Article
Language:English
Published: Elsevier 2019-03-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379718328584