Investigation of 5-nm-Thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope

Investigation of 5-nm-Thick Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric FinFET Dimensions for Sub-60-mV/Decade Subthreshold Slope

In this study, ferroelectric Fin field effect transistors (Fe-FinFET) with 5-nm-thick Hf0.5Zr0.5O2 (HZO) layers on silicon-on-insulator substrates were experimentally demonstrated. These devices had completed dimensions of single channel widths (WCh) from 20 nm to 1000 nm and gate lengths (LG) from...

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Bibliographic Details
Main Authors: Meng-Ju Tsai, Pin-Jui Chen, Dun-Bao Ruan, Fu-Ju Hou, Po-Yang Peng, Liu-Gu Chen, Yung-Chun Wu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Negative capacitance
ferroelectric
FinFET
dimension effect
hafnium zirconium oxide
sub-60-mV/decade
Online Access:https://ieeexplore.ieee.org/document/8844743/

Internet

https://ieeexplore.ieee.org/document/8844743/

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