Analysis and Optimization of Power MOSFETs Shaped Switching Transients for Reduced EMI Generation

Analysis and Optimization of Power MOSFETs Shaped Switching Transients for Reduced EMI Generation

The abrupt change in current or voltage caused by the rapid switching action of power semiconductor devices will generate high-frequency electromagnetic interference (EMI) and needs to be located as the primary interference sources in power electronics. This paper deals with interference suppression...

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Bibliographic Details
Main Authors: Tongkai Cui, Qishuang Ma, Ping Xu, Yuchen Wang
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Access
Subjects:
Closed-loop gate drive
electromagnetic interference
interference suppression
spectral analysis
switching converters
switching transient
Online Access:https://ieeexplore.ieee.org/document/8055554/

Internet

https://ieeexplore.ieee.org/document/8055554/

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