Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

In this work, device parameters for GaN vertical trench MOSFETs have been investigated systematically to further improve the device characteristics. The n<sup>-</sup> GaN drift layer, the p<sup>+</sup> GaN layer and the trench gate are designed and optimized systematically us...

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Bibliographic Details
Main Authors: Shuang Liu, Xiufeng Song, Jincheng Zhang, Shenglei Zhao, Jun Luo, Hong Zhang, Yachao Zhang, Weihang Zhang, Hong Zhou, Zhihong Liu, Yue Hao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
GaN vertical trench MOSFETs
breakdown voltage
specific on-resistance
power figure-of-merit (FOM)
Online Access:https://ieeexplore.ieee.org/document/9019679/

Internet

https://ieeexplore.ieee.org/document/9019679/

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