Impact of Al content on InAs/AlSb/Al(x)Ga(1−x)Sb tunnelling diode
A method to engineer the peak-to-valley ratio (PVR) by design of the epitaxial layers is presented. The impact of Al content on PVR of InAs/AlSb/Al(x)Ga(1−x)Sb tunnelling diode is studied. A simplified analytical model is used to explain the PVRs dependence on Al content. It was found that PVR reach...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2017-06-01
|
| Series: | The Journal of Engineering |
| Subjects: | |
| Online Access: | http://digital-library.theiet.org/content/journals/10.1049/joe.2017.0248 |