A New Concept in the Design of RF Circuits Using PD SOI MOSFET
Recently, there has been a growing interest in using SOI MOSFET as the device dimension shrinks to nano scale regime. The difference between SOI and Bulk MOSFETs is the presence of a transition in the output conductance frequency response due to the nonzero body resistance. Parameters affected by th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Najafabad Branch, Islamic Azad University
2012-01-01
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| Series: | Journal of Intelligent Procedures in Electrical Technology |
| Subjects: | |
| Online Access: | http://jipet.iaun.ac.ir/pdf_4421_add39f7f20b95d9b724729477f801ec2.html |