Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture

Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture

The recent technological trends toward miniaturization in lighting and display devices are accelerating the requirement for high-performance and small-scale GaN-based light-emitting diodes (LEDs). In this work, the effect of mesa size-reduction in the InGaN/GaN LEDs is systematically investigated in...

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Bibliographic Details
Main Authors: Yiping Zhang, Shunpeng Lu, Ying Qiu, Jing Wu, Menglong Zhang, Dongxiang Luo
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-01-01
Series:Frontiers in Chemistry
Subjects:
GaN
light-emitting diode
miniaturization
size effect
micro-LED
current crowding effect
Online Access:https://www.frontiersin.org/articles/10.3389/fchem.2020.630050/full

Internet

https://www.frontiersin.org/articles/10.3389/fchem.2020.630050/full

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