The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2
The hydrogen plasma treatment of single crystal diamond was carried out by microwave plasma chemical vapor deposition equipment, and the normally-off hydrogen-terminated diamond field-effect transistors (FETs) with different gate lengths were prepared by atomic layer deposition (ALD) which deposited...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-04-01
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| Series: | Micro and Nano Engineering |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007220300010 |