Exploiting the Back-Gate Biasing Technique as a Countermeasure Against Power Analysis Attacks
Fully depleted silicon-on-insulator (FD-SOI) technology is renowned for its back-gate bias voltage controllability. It allows devices fabricated with FD-SOI technology to be optimized for low power consumption or high performance with proper back-gate biases, depending on the required application. T...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9348887/ |