Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

Memristive and Memory Impedance Behavior in a Photo-Annealed ZnO–rGO Thin-Film Device

An oxygen-rich ZnO-reduced graphene oxide (rGO) thin film was synthesized using a photo-annealing technique from zinc precursor (ZnO)−graphene oxide (GO) sol−gel solution. X-ray diffraction (XRD) results show a clear characteristic peak corresponding to rGO. The scanning electron...

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Bibliographic Details
Main Authors: Gian Carlo Cardarilli, Gaurav Mani Khanal, Luca Di Nunzio, Marco Re, Rocco Fazzolari, Raj Kumar
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Electronics
Subjects:
memristive device
resistive switching
zno–rgo memristor
memory impedance
Online Access:https://www.mdpi.com/2079-9292/9/2/287

Internet

https://www.mdpi.com/2079-9292/9/2/287

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