Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results in...

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Bibliographic Details
Main Authors: Yan Gu, Dongmei Chang, Haiyan Sun, Jicong Zhao, Guofeng Yang, Zhicheng Dai, Yu Ding
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Electronics
Subjects:
In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN HEMT
graded-polarization
back barrier
parasitic electron channel
electron confinement
Online Access:https://www.mdpi.com/2079-9292/8/8/885

Internet

https://www.mdpi.com/2079-9292/8/8/885

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