Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction
In this work, an III-V tunneling field-effect transistor (TFET) with source and channel heterojunctions is proposed and introduced. Proposed structure combine the high tunneling efficiency induced by heterojunction material and the high mobility of III-V material. The III-V TFETs based on either sou...
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| Format: | Article |
| Language: | English |
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Instituto Federal de Educação, Ciência e Tecnologia do Rio Grande do Norte
2020-02-01
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| Series: | Holos |
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| Online Access: | http://www2.ifrn.edu.br/ojs/index.php/HOLOS/article/view/8378 |