Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization
Metal induced crystallization using aluminum (Al) as catalytic metal was applied to achieve low-temperature crystallization of amorphous silicon (a-Si) on 4H-SiC. Epitaxial crystallization of Si grains was found to occur on off-axis 4H-SiC at very low temperatures using X-ray diffractometry (XRD). I...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-06-01
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| Series: | Materials Letters: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S259015082030003X |