Specific features of defect formation in the n­Si <P> single crystals at electron irradiation

Specific features of defect formation in the n­Si <P> single crystals at electron irradiation

Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si <P>, irradiated by different fluxes of electrons with an energy...

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Bibliographic Details
Main Authors: Sergiy Luniov, Andriy Zimych, Mykola Khvyshchun, Mykola Yevsiuk, Volodymyr Maslyuk
Format: Article
Language:English
Published: PC Technology Center 2018-12-01
Series:Eastern-European Journal of Enterprise Technologies
Subjects:
silicon single crystals
infrared fourier spectroscopy
hall effect
uniaxial pressure
radiation defects
deep energy levels
Online Access:http://journals.uran.ua/eejet/article/view/150959

Internet

http://journals.uran.ua/eejet/article/view/150959

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