Interfacial characteristics of Au/Al2O3/InP metal-insulator-semiconductor diodes
The interfacial properties of Au/n-InP contacts with a thin layer of Al2O3 (0.7 or 2.7 nm) deposited by atomic layer deposition (ALD) were investigated using temperature-dependent current-voltage (I–V–T) and depth-resolved X-ray photoelectron spectroscopy (XPS) measurements. Schottky barrier inhomog...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-09-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5047538 |