A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss
Abstract In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. The proposed structure features an integrated Schottky...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12169 |