Effects of Te additions and stirring in the In segregation in Ga1-xInxSb alloys
Abstract The influence of tellurium in the indium segregation of Ga1-xInxSb:Te ingots obtained by the conventional vertical Bridgman method (CVBM), under stirred and non-stirred conditions, was investigated. Three Te-doped ingots and three no-doped ingots were unidirectionally solidified at a consta...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Fundação Gorceix
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| Series: | REM: International Engineering Journal |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2448-167X2016000400465&lng=en&tlng=en |