Utilizing tertiary butyl iodide as an effective film quality enhancing agent for atomic layer deposition of HfO2 dielectric thin films
The effects of the initial pulse of tert-butyl iodide as a surfactant in atomic layer deposition of HfO2 using cyclopentadienyl tris(dimethylamino) hafnium, CpHf(NMe2)3, and ozone, O3, are investigated at 320, 300, and 250 °C. The formation of 2-methylpropene and hydrogen iodide from tert-butyl iodi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0055847 |