A Physical Model for the Hysteresis in MoS<sub>2</sub> Transistors

A Physical Model for the Hysteresis in MoS<sub>2</sub> Transistors

Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the hysteresis phenomenon can be captured accurately by...

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Bibliographic Details
Main Authors: Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MOSFET
nanomaterials
semiconductor device modeling
hysteresis
semiconductor device reliability
two-dimensional materials
Online Access:https://ieeexplore.ieee.org/document/8347071/

Internet

https://ieeexplore.ieee.org/document/8347071/

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