Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.

Bibliographic Details
Main Authors:	Anna Giorgioni, Stefano Paleari, Stefano Cecchi, Elisa Vitiello, Emanuele Grilli, Giovanni Isella, Wolfgang Jantsch, Marco Fanciulli, Fabio Pezzoli
Format:	Article
Language:	English
Published:	Nature Publishing Group 2016-12-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms13886

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spelling	doaj-cc0a2887038944919c6dbbbe042fc45c2021-05-11T11:07:53ZengNature Publishing GroupNature Communications2041-17232016-12-017111110.1038/ncomms13886Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wellsAnna Giorgioni0Stefano Paleari1Stefano Cecchi2Elisa Vitiello3Emanuele Grilli4Giovanni Isella5Wolfgang Jantsch6Marco Fanciulli7Fabio Pezzoli8LNESS and Dipartimento di Scienza dei Materiali, Università di Milano BicoccaDipartimento di Scienza dei Materiali, Università di Milano BicoccaLNESS and Dipartimento di Fisica, Politecnico di MilanoLNESS and Dipartimento di Scienza dei Materiali, Università di Milano BicoccaLNESS and Dipartimento di Scienza dei Materiali, Università di Milano BicoccaLNESS and Dipartimento di Fisica, Politecnico di MilanoInstitut für Halbleiter-und Festkörperphysik, Johannes Kepler UniversityDipartimento di Scienza dei Materiali, Università di Milano BicoccaLNESS and Dipartimento di Scienza dei Materiali, Università di Milano BicoccaGe/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.https://doi.org/10.1038/ncomms13886
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Anna Giorgioni Stefano Paleari Stefano Cecchi Elisa Vitiello Emanuele Grilli Giovanni Isella Wolfgang Jantsch Marco Fanciulli Fabio Pezzoli
spellingShingle	Anna Giorgioni Stefano Paleari Stefano Cecchi Elisa Vitiello Emanuele Grilli Giovanni Isella Wolfgang Jantsch Marco Fanciulli Fabio Pezzoli Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells Nature Communications
author_facet	Anna Giorgioni Stefano Paleari Stefano Cecchi Elisa Vitiello Emanuele Grilli Giovanni Isella Wolfgang Jantsch Marco Fanciulli Fabio Pezzoli
author_sort	Anna Giorgioni
title	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_short	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_full	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_fullStr	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_full_unstemmed	Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
title_sort	strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in ge quantum wells
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2016-12-01
description	Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.
url	https://doi.org/10.1038/ncomms13886
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Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

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