Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells
Ge/Si heterojunctions are prominent candidates for spintronics, but the spin-dependent phenomena have been elusive. Here, Giorgioniet al. report long spin relaxation and coherence times in a two dimensional electron gas confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates.
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2016-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms13886 |