Manufacturing technology for contacts to silicon carbide
The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...
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Politehperiodika
2013-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/05.zip |
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doaj-cbe669d0fec444dab985e508b99db2b32020-11-24T23:43:23ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182013-02-0112537Manufacturing technology for contacts to silicon carbideKudryk Ya.Ya.Bigun R. I.Kudryk R. Ya.The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal contact-forming layers for p- and n-SiC types of 4H, 6H, 3C, 15R, 21R polytypes.http://www.tkea.com.ua/tkea/2013/1_2013/pdf/05.zipohmic contactSiC |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Kudryk Ya.Ya. Bigun R. I. Kudryk R. Ya. |
| spellingShingle |
Kudryk Ya.Ya. Bigun R. I. Kudryk R. Ya. Manufacturing technology for contacts to silicon carbide Tekhnologiya i Konstruirovanie v Elektronnoi Apparature ohmic contact SiC |
| author_facet |
Kudryk Ya.Ya. Bigun R. I. Kudryk R. Ya. |
| author_sort |
Kudryk Ya.Ya. |
| title |
Manufacturing technology for contacts to silicon carbide |
| title_short |
Manufacturing technology for contacts to silicon carbide |
| title_full |
Manufacturing technology for contacts to silicon carbide |
| title_fullStr |
Manufacturing technology for contacts to silicon carbide |
| title_full_unstemmed |
Manufacturing technology for contacts to silicon carbide |
| title_sort |
manufacturing technology for contacts to silicon carbide |
| publisher |
Politehperiodika |
| series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| issn |
2225-5818 |
| publishDate |
2013-02-01 |
| description |
The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal contact-forming layers for p- and n-SiC types of 4H, 6H, 3C, 15R, 21R polytypes. |
| topic |
ohmic contact SiC |
| url |
http://www.tkea.com.ua/tkea/2013/1_2013/pdf/05.zip |
| work_keys_str_mv |
AT kudrykyaya manufacturingtechnologyforcontactstosiliconcarbide AT bigunri manufacturingtechnologyforcontactstosiliconcarbide AT kudrykrya manufacturingtechnologyforcontactstosiliconcarbide |
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