Manufacturing technology for contacts to silicon carbide
The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2013-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2013/1_2013/pdf/05.zip |