Manufacturing technology for contacts to silicon carbide

Manufacturing technology for contacts to silicon carbide

The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal c...

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Bibliographic Details
Main Authors: Kudryk Ya.Ya., Bigun R. I., Kudryk R. Ya.
Format: Article
Language:English
Published: Politehperiodika 2013-02-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
ohmic contact
SiC
Online Access:http://www.tkea.com.ua/tkea/2013/1_2013/pdf/05.zip
Description
Summary:The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal contact-forming layers for p- and n-SiC types of 4H, 6H, 3C, 15R, 21R polytypes.
ISSN:2225-5818

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