Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers. The characterization process included PBTI (positive bias temperature instabil...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-01-01
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| Series: | Journal of Low Power Electronics and Applications |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9268/10/1/3 |