| Summary: | Electroplating of a Cu electrode on a Si substrate is carried into effect in order to get vacuum nano-clearance of a big area for the thermotunnel devices. For obtaining the correct geometry of such an electrode and reduction of the internal tension, there were used the rotation of the cathode, various protective masks, the dissymmetric current mode, the regulation and stabilization of electrolit’s temperature. The diameter of electrode reduction down to 3 mm and the increase in thickness of an initial silicon plate up to 2 mm enable to grow up an electrode with a bend of about 2,5 nm/mm. Which made it possible to obtain two conform electrodes with the nano-clearance of less than 5 nm on the area of 7 mm2. The conform electrodes of this type may be used in the device based on electrons tunnel transition.
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